Title :
Monitoring of biaxial strained-silicon layers by spectroscopic ellipsometry
Author :
Gong, Y. ; Ng, C.M. ; Yang, P. ; Chan, L. ; Wong, T.K.S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
Spectroscopic ellipsometry (SE) has been extended to the non-destructive, in-line monitoring of biaxial tensile strain in strained silicon (epsiv-Si). SE data from 250nm - 500nm from three epsiv-Si samples were fitted using a new parametric model for semiconductors. By using the E1 peak shift in the fitted dielectric function spectra, the tensile strain in epsiv-Si can be monitored. Strain values obtained are in agreement with Raman measurements
Keywords :
ellipsometry; monitoring; semiconductor device manufacture; semiconductor growth; semiconductor thin films; substrates; 250 to 500 nm; E1 peak shift; biaxial strained-silicon layers monitoring; biaxial tensile strain; fitted dielectric function spectra; in line monitoring; nondestructive monitoring; spectroscopic ellipsometry; Capacitive sensors; Dielectric substrates; Ellipsometry; Germanium silicon alloys; Monitoring; Silicon germanium; Spectroscopy; Strain measurement; Tensile strain; X-ray diffraction;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306121
