A Fully Integrated 14-Band 3.1-to-10.6GHz 0.13μm SiGe BiCMOS UWB RF Transceiver

Author

Werther, O. ; Cavin, M. ; Schneider, A. ; Renninger, R. ; Liang, B. ; Bu, L. ; Jin, Y. ; Marcincavage, J.

Author_Institution

Alereon, Austin, TX

fYear

2008

fDate

3-7 Feb. 2008

Firstpage

122

Lastpage

601

Abstract

In this work, a highly integrated 14-band UWB transceiver is designed in a 0.13mum SiGe BiCMOS technology. The chip consumes 425mW during receive mode and 380mW during transmit mode from a split power supply of 2.4 and 1.2V. In this architecture a divide and mix approach is selected to allow the use of a single PLL with one RF VCO and one loop filter. The transmitter is designed to reduce spurious emissions to -70dBm to support Japanese and European transmit mask requirements.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; microwave integrated circuits; phase locked loops; transceivers; ultra wideband communication; voltage-controlled oscillators; BiCMOS technology; European transmit mask; Japanese transmit mask; PLL; RF VCO; SiGe; UWB RF transceiver; frequency 3.1 GHz to 10.6 GHz; loop filter; power 380 mW; power 425 mW; size 0.13 mum; split power supply; spurious emission reduction; voltage 1.2 V; voltage 2.4 V; BiCMOS integrated circuits; Filters; Germanium silicon alloys; Phase locked loops; Power supplies; Radio frequency; Silicon germanium; Transceivers; Transmitters; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International

Conference_Location

San Francisco, CA

Print_ISBN

978-1-4244-2010-0

Electronic_ISBN

978-1-4244-2011-7

Type

conf

DOI

10.1109/ISSCC.2008.4523087

Filename

4523087