DocumentCode
346297
Title
Hysteresis effect in floating-body partially-depleted SOI CMOS domino circuits
Author
Puri, R. ; Chuang, C.T.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1999
fDate
17-17 Aug. 1999
Firstpage
223
Lastpage
228
Abstract
This paper investigates the basic mechanisms of hysteretic delay and noise margin variations for floating-body partially-depleted SOI CMOS domino circuits in detail. Three cases, based on whether the input signals are "domino input signals" from other domino circuits; "static input signals" from static circuits or latches; or a combination of "domino and static input signals" are examined and differentiated. It is shown that hysteretic delay variation is larger and noise margin worse for the later case with "mixed domino and static input signals." Although the delay and noise margin disparities between the three types of input signals are significant at beginning of the clock cycles, they converge as the circuit approaches steady-state.
Keywords
CMOS logic circuits; delays; equivalent circuits; hysteresis; integrated circuit noise; low-power electronics; silicon-on-insulator; CMOS domino circuits; floating-body PD SOI CMOS circuits; hysteresis effect; hysteretic delay variations; noise margin variations; partially-depleted SOI CMOS circuits; CMOS technology; Circuit noise; Clocks; Delay effects; Hysteresis; Immune system; Latches; Partial discharges; Semiconductor films; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Power Electronics and Design, 1999. Proceedings. 1999 International Symposium on
Conference_Location
San Diego, CA, USA
Print_ISBN
1-58113-133-X
Type
conf
Filename
799443
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