• DocumentCode
    346297
  • Title

    Hysteresis effect in floating-body partially-depleted SOI CMOS domino circuits

  • Author

    Puri, R. ; Chuang, C.T.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1999
  • fDate
    17-17 Aug. 1999
  • Firstpage
    223
  • Lastpage
    228
  • Abstract
    This paper investigates the basic mechanisms of hysteretic delay and noise margin variations for floating-body partially-depleted SOI CMOS domino circuits in detail. Three cases, based on whether the input signals are "domino input signals" from other domino circuits; "static input signals" from static circuits or latches; or a combination of "domino and static input signals" are examined and differentiated. It is shown that hysteretic delay variation is larger and noise margin worse for the later case with "mixed domino and static input signals." Although the delay and noise margin disparities between the three types of input signals are significant at beginning of the clock cycles, they converge as the circuit approaches steady-state.
  • Keywords
    CMOS logic circuits; delays; equivalent circuits; hysteresis; integrated circuit noise; low-power electronics; silicon-on-insulator; CMOS domino circuits; floating-body PD SOI CMOS circuits; hysteresis effect; hysteretic delay variations; noise margin variations; partially-depleted SOI CMOS circuits; CMOS technology; Circuit noise; Clocks; Delay effects; Hysteresis; Immune system; Latches; Partial discharges; Semiconductor films; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design, 1999. Proceedings. 1999 International Symposium on
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    1-58113-133-X
  • Type

    conf

  • Filename
    799443