Title :
An omni-directional comparison between common-emitter and common-base SiGe HBTs
Author :
Zhenqiang Ma ; Ningyue Jiang ; Guogong Wang ; Hui Li ; Guoxuan Qin
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI
Abstract :
The unique device structures of SiGe HBTs, in comparison to Si bipolar homojunction transistors (BJTs), allow us to reconsider the value of common-base (CB) configuration for high-frequency amplifications. In this paper, an omni-directional comparison between common-emitter (CE) and common-base SiGe power HBTs is made. By comparing the power gain, power handling, linearity, noise and stability characteristics between these two configurations, significant advantages for circuit design can be obtained by using the proper configuration of SiGe HBTs for certain amplifier applications
Keywords :
amplifiers; heterojunction bipolar transistors; integrated circuit design; power bipolar transistors; SiGe; circuit design; common-base HBT; common-emitter HBT; high-frequency amplifications; omni-directional comparison; power HBT; Circuit noise; Circuit stability; Doping profiles; Drives; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Power amplifiers; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306128
