Single-grain Si TFTs and circuits for flexible electronics and 3D-ICs

Author

Ishihara, Ryoichi ; Rana, Vikas ; He, Ming ; Metselaar, Wim ; Beenakker, Kees

Author_Institution

Fac. of Electr. Eng., Math. & Comput. Sci., Delft Univ. of Technol.

fYear

2006

fDate

Oct. 2006

Firstpage

174

Lastpage

177

Abstract

Thin film transistors (TFTs) were fabricated inside a location-controlled, large Si grains through an advanced excimer-laser crystallization with a low temperature process. The field-effect mobility for electrons of the single-grain Si TFTs was as high as 597 cm ²/Vs. CMOS inverters are fabricated inside the location-controlled grain. Propagation delay per stage of 3.1 ns was successfully obtained with a supply voltage of 8V

Keywords

CMOS integrated circuits; crystallisation; elemental semiconductors; excimer lasers; flexible electronics; invertors; laser beam applications; silicon; thin film circuits; thin film transistors; 3.1 ns; 3D IC; 8 V; CMOS inverters; Si; Si grains; excimer-laser crystallization; field-effect mobility; flexible electronics; location-controlled grain; low temperature process; propagation delay; single-grain Si TFT; thin film transistors; Crystallization; Electron mobility; Flexible electronics; Flexible printed circuits; Inverters; Propagation delay; Temperature; Thin film transistors; Three-dimensional integrated circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306130

Filename

4098052