Title :
Impact of base doping profile on stability characteristics of SiGe HBTs
Author :
Jiang, Ningyue ; Ma, Zhenqiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
Abstract :
The influence of doping profile on stability characteristics of SiGe HBTs in both common-emitter and common-base configurations is studied for the first time. It is found that the base doping concentration has a strong influence on the stability characteristics of the common-base configuration. An unconditional stability operation condition for the common-base SiGe HBTs can be potentially realized over the entire amplification frequency range by employing sufficiently high base-doping concentrations
Keywords :
Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor doping; SiGe; SiGe HBT; base doping profile; common-base configurations; common-emitter configurations; stability characteristics; unconditional stability operation condition; Degradation; Doping profiles; Frequency dependence; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Microwave devices; Radio frequency; Silicon germanium; Stability;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306132
