Title :
Influences of device size on small- and large-signal performance of SiGe power HBTs
Author :
Wang, Guogong ; Park, Jonghoo ; Hui Li ; Ma, Zhenqiang ; Lie, Donald ; Lopez, Jerry ; Hurtado, A.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI
Abstract :
The influences of device size on the small- and large-signal performance of SiGe power HBTs were experimentally studied. It is found that due to the increased parasitics along with the increase of device area, the maximum power gain Gmax (MAG/MSG), maximum oscillation frequency fmax and large-signal power gain continuously decrease with the increase of device size. Furthermore, when the device size is larger than a certain area, the degradation of power gain is so severe that further increasing device area did not increase the output power of a SiGe power HBT
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; power bipolar transistors; SiGe; SiGe power HBT; large-signal performance; maximum oscillation frequency; maximum power gain; small-signal performance; BiCMOS integrated circuits; Cutoff frequency; Fabrication; Frequency response; Germanium silicon alloys; Heterojunction bipolar transistors; Power generation; Radio frequency; Silicon germanium; Thermal degradation;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306134
