Influences of device size on small- and large-signal performance of SiGe power HBTs

Author

Wang, Guogong ; Park, Jonghoo ; Hui Li ; Ma, Zhenqiang ; Lie, Donald ; Lopez, Jerry ; Hurtado, A.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

188

Lastpage

190

Abstract

The influences of device size on the small- and large-signal performance of SiGe power HBTs were experimentally studied. It is found that due to the increased parasitics along with the increase of device area, the maximum power gain G_max (MAG/MSG), maximum oscillation frequency f_max and large-signal power gain continuously decrease with the increase of device size. Furthermore, when the device size is larger than a certain area, the degradation of power gain is so severe that further increasing device area did not increase the output power of a SiGe power HBT

Keywords

Ge-Si alloys; heterojunction bipolar transistors; power bipolar transistors; SiGe; SiGe power HBT; large-signal performance; maximum oscillation frequency; maximum power gain; small-signal performance; BiCMOS integrated circuits; Cutoff frequency; Fabrication; Frequency response; Germanium silicon alloys; Heterojunction bipolar transistors; Power generation; Radio frequency; Silicon germanium; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306134

Filename

4098056