DocumentCode :
3463090
Title :
Operation of a silicon CMOS electron pump
Author :
Pierre, M. ; Roche, B. ; Jehl, X. ; Wacquez, R. ; Sanquer, M. ; Vinet, M. ; Feltin, N. ; Devoille, L.
Author_Institution :
INAC, Commissariat a l´´energie atomique, Grenoble, France
fYear :
2010
fDate :
13-18 June 2010
Firstpage :
755
Lastpage :
756
Abstract :
We show the first measurements of a silicon electron pump produced in an industrial CMOS facility. Sample fabrication derived from state-of-the-art microelectronics processes results in mass production with high yield, very small sizes and easy operation up to high frequencies as these pump do not suffer from cross-capacitance. Further data with metrological assessment will be shown, as well as a a comparison of classical and non-adiabatic pumping modes within the same devices.
Keywords :
CMOS integrated circuits; micropumps; cross-capacitance; metrological assessment; microelectronics processes; nonadiabatic pumping modes; silicon CMOS electron pump; Electromagnetic measurements; Electrons; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4244-6795-2
Type :
conf
DOI :
10.1109/CPEM.2010.5543479
Filename :
5543479
Link To Document :
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