Title :
Electrical properties and carrier transport mechanisms of nanometer-scale ultra-thin channel poly-Si transistors
Author :
Guo, Xiaojun ; Ishii, Tomoyuki ; Silva, S.R.P.
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford
Abstract :
This paper investigates the electrical properties and the carrier transport mechanisms of nanometer-scale ultra-thin channel (< 3.0nm) poly-Si transistors to be guidelines for future process on device optimization and modeling. Devices used for the study are fabricated with a precise control over the film thickness down to sub-nanometer scale
Keywords :
electric properties; nanotechnology; optimisation; thin film transistors; carrier transport mechanisms; device optimization; electrical properties; nanometer-scale poly-Si transistors; nanometer-scale ultra-thin channel; ultra-thin channel poly-Si transistors; Electrodes; Fabrication; Intrusion detection; Leakage current; Lithography; Mechanical factors; Resists; Silicon compounds; Thickness control; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306136
