Scalable bipolar model for BiCMOS and bipolar circuits

Author

Dai, Y. ; Yuan, J.S. ; Phanse, A.M. ; Yeh, C.S. ; Kwang, K.

Author_Institution

Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

Volume

2

fYear

1996

fDate

13-16 Oct 1996

Firstpage

868

Abstract

A Gummel-Poon like bipolar transistor model including effects of quasi-saturation is derived. The model includes multi-dimensional effects such as sidewall injection, emitter current crowding, and collector current spreading. A current-dependent epilayer collector resistance is proposed to model collector conductivity modulation in quasi-saturation. The model has been compared with measurement and implemented in bipolar and BiCMOS circuits

Keywords

BiCMOS integrated circuits; bipolar integrated circuits; bipolar transistors; semiconductor device models; BiCMOS circuit; bipolar circuit; bipolar transistor; collector conductivity modulation; collector current spreading; emitter current crowding; epilayer collector resistance; multi-dimensional effects; quasi-saturation; scalable Gummel-Poon model; sidewall injection; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Conductivity; Current density; Current measurement; Proximity effect; Semiconductor device modeling; Semiconductor process modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on

Conference_Location

Rodos

Print_ISBN

0-7803-3650-X

Type

conf

DOI

10.1109/ICECS.1996.584520

Filename

584520