• DocumentCode
    3463162
  • Title

    Extraction of R/sub SD/ and /spl Delta/L in deep-submicrometer MOSFETs

  • Author

    Chang, Yang-Hua ; Lin, Yi-Ling

  • Author_Institution
    Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol.
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    200
  • Lastpage
    202
  • Abstract
    In this work, the paper propose two algorithms to extract the gate-bias-dependent parameters including the RSD, the effective channel length reduction DeltaL, and effective channel mobility mueff for deep submicrometer MOSFETs
  • Keywords
    MOSFET; electron mobility; deep-submicrometer MOSFET; effective channel length reduction; effective channel mobility; gate-bias-dependent parameters; Degradation; Implants; Length measurement; MOSFET circuits; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306138
  • Filename
    4098060
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3463162