Model for thermal spreading impedance in GaAs MESFETs

Author

Veijola, Timo

Author_Institution

Circuit Theory Lab., Helsinki Univ. of Technol., Espoo, Finland

Volume

2

fYear

1996

fDate

13-16 Oct 1996

Firstpage

872

Abstract

A simulation model for dynamic temperature response in GaAs MESFET structures is presented. In the model, the heated volumes below the gate fingers are constructed of heated spheres. Analytic formulas for the thermal spreading impedance at any point in the device are presented. These formulas are realized with a simple linear electrical equivalent circuit that can be used as the thermal part of an electrothermal MESFET model. By means of this electrical equivalent circuit, the model is applicable in all analysis modes of a circuit simulator. The model behaviour is demonstrated here with DC, AC and transient simulations

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; thermal resistance; GaAs; dynamic temperature response; electrothermal simulation model; heated sphere; linear electrical equivalent circuit; multi-finger GaAs MESFET; thermal spreading impedance; Circuit simulation; Electrothermal effects; Fingers; Gallium arsenide; Heat transfer; Impedance; MESFETs; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on

Conference_Location

Rodos

Print_ISBN

0-7803-3650-X

Type

conf

DOI

10.1109/ICECS.1996.584521

Filename

584521