Title :
Model for thermal spreading impedance in GaAs MESFETs
Author_Institution :
Circuit Theory Lab., Helsinki Univ. of Technol., Espoo, Finland
Abstract :
A simulation model for dynamic temperature response in GaAs MESFET structures is presented. In the model, the heated volumes below the gate fingers are constructed of heated spheres. Analytic formulas for the thermal spreading impedance at any point in the device are presented. These formulas are realized with a simple linear electrical equivalent circuit that can be used as the thermal part of an electrothermal MESFET model. By means of this electrical equivalent circuit, the model is applicable in all analysis modes of a circuit simulator. The model behaviour is demonstrated here with DC, AC and transient simulations
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; thermal resistance; GaAs; dynamic temperature response; electrothermal simulation model; heated sphere; linear electrical equivalent circuit; multi-finger GaAs MESFET; thermal spreading impedance; Circuit simulation; Electrothermal effects; Fingers; Gallium arsenide; Heat transfer; Impedance; MESFETs; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
Conference_Location :
Rodos
Print_ISBN :
0-7803-3650-X
DOI :
10.1109/ICECS.1996.584521
