Effect of implanting silicon in buried oxide on the radiation hardness of the partially-depleted CMOS/SOI

In order to improve the total dose radiation hardness of the buried oxides (BOX) of separation by implanted oxygen (SIMOX) silicon on insulator (SOI),we implanted silicon into the BOX at a dose of l times 1015cm-2 and then annealed at 800 degC in N₂ ambience. Partially depleted CMOS/SOI inverters with enclosed-gate structure fabricated on improved SIMOX substrate and standard SIMOX substrate were exposed to 60CO gamma-ray radiation. The results of demonstrate that compare to standard CMOS/SOI inverters; the improved CMOS/SOI inverters have less switching voltage shifts and smaller leakage current after the same total dose irradiation