Title :
A novel bonding partial SOI structure with polysilicon transition layer
Author :
Kaizhou, Tan ; Jian, Feng ; Yong, Liu ; Shiliu, Xu ; Mohua, Yang ; Zhaoji, Li ; Kaicheng, Li ; Zhengfan, Zhang ; Yukui, Liu ; KaiQuan, He
Author_Institution :
Sch. of Microelectron. & Solid-state Electron., Univ. of Electron. Sci. & Technol., Chengdu
Abstract :
A novel bonding partial SOI structure is described in this paper. The method of LPCVD plus epitaxy-growth bond polysilicon transition layer is proposed, and the structure is achieved. The completeness of this novel wafer structure is greater than 85%. The mean contact specific resistance of Si-Si direct bonding interface is less than 5 times 10-4 ohm.cm2
Keywords :
bonding processes; chemical vapour deposition; epitaxial growth; silicon-on-insulator; LPCVD; direct bonding interface; epitaxy-growth bond; partial SOI structure; polysilicon transition layer; wafer structure; Epitaxial growth; Insulation; Microelectronics; Planarization; Rough surfaces; Silicon compounds; Silicon on insulator technology; Surface roughness; Surface treatment; Wafer bonding;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306166
