• DocumentCode
    3463278
  • Title

    A novel bonding partial SOI structure with polysilicon transition layer

  • Author

    Kaizhou, Tan ; Jian, Feng ; Yong, Liu ; Shiliu, Xu ; Mohua, Yang ; Zhaoji, Li ; Kaicheng, Li ; Zhengfan, Zhang ; Yukui, Liu ; KaiQuan, He

  • Author_Institution
    Sch. of Microelectron. & Solid-state Electron., Univ. of Electron. Sci. & Technol., Chengdu
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    218
  • Lastpage
    220
  • Abstract
    A novel bonding partial SOI structure is described in this paper. The method of LPCVD plus epitaxy-growth bond polysilicon transition layer is proposed, and the structure is achieved. The completeness of this novel wafer structure is greater than 85%. The mean contact specific resistance of Si-Si direct bonding interface is less than 5 times 10-4 ohm.cm2
  • Keywords
    bonding processes; chemical vapour deposition; epitaxial growth; silicon-on-insulator; LPCVD; direct bonding interface; epitaxy-growth bond; partial SOI structure; polysilicon transition layer; wafer structure; Epitaxial growth; Insulation; Microelectronics; Planarization; Rough surfaces; Silicon compounds; Silicon on insulator technology; Surface roughness; Surface treatment; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306166
  • Filename
    4098066
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3463278