Title :
The elastic constants of sputtered aluminum nitride films
Author :
Carlotti, G. ; Hickernell, F.S. ; Liaw, H.M. ; Palmieri, L. ; Socino, G. ; Verona, E.
Author_Institution :
Dipartimento di Fisica, Perugia Univ., Italy
Abstract :
Brillouin light scattering has been used for determining the five independent elastic constants of polycrystalline AlN films grown by DC magnetron sputtering on Si3N4 coated (100)-Si substrates. The elastic constants c66 and c11 have been selectively determined from detection of the shear horizontal mode and of the longitudinal mode travelling parallel to the film surface, respectively. The three remaining elastic constants, namely c13 , c33 and c44, have been obtained from detection of the Rayleigh surface mode and of the longitudinal bulk wave propagating at different angles from the surface normal. The values of the elastic constants of these sputtered AlN films exhibit an appreciable dependence on the microstructural properties of the films, which are strongly affected by the deposition conditions. However, they are rather close to those previously determined in epitaxial AlN films grown at high temperature by MOCVD
Keywords :
Brillouin spectra; III-V semiconductors; Rayleigh waves; aluminium compounds; crystal microstructure; elastic constants; piezoelectric semiconductors; semiconductor thin films; sputtered coatings; wide band gap semiconductors; AlN; Brillouin light scattering; DC magnetron sputtering; Rayleigh surface mode; Si; Si3N4 coated (100)-Si substrates; Si3N4-Si; deposition conditions; elastic constants; film surface; longitudinal bulk wave; longitudinal mode; microstructural properties; polycrystalline AlN films; shear horizontal mode; sputtered aluminum nitride films; Aluminum nitride; Brillouin scattering; Light scattering; MOCVD; Magnetoelasticity; Semiconductor films; Sputtering; Substrates; Surface waves; Temperature;
Conference_Titel :
Ultrasonics Symposium, 1995. Proceedings., 1995 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-2940-6
DOI :
10.1109/ULTSYM.1995.495597