Title :
Improving the high frequency performance of SiGe HBT with new lateral structure and process
Author :
Weiming, Yang ; Chen, Shi ; Sujuan, Liu ; Jianxin, Chen
Author_Institution :
Sch. of Phys. & Electron. Technol., Hubei Univ., Wuhan
Abstract :
After the shortage of the conventional lateral structure of SiGe HBT was analyzed, A new lateral structure was presented. In the meantime, the new fabrication process named buried metal self-aligned technique was designed. The measured frequency features show that the cut-off frequency fT of the device up to 12.3GHz and the maximum oscillation frequency fmax achieves 5.7GHz. Compared to the conventional lateral structure and process, the values of fT and fmax of SiGe HBT based on the new lateral structure and process have been increased 17% and 18.75% respectively. This indicates that the new lateral structure and buried metal self-aligned process is effective to improve the high frequency performance of SiGe HBT
Keywords :
Ge-Si alloys; buried layers; heterojunction bipolar transistors; HBT; SiGe; buried metal self-aligned technique; high frequency performance; lateral process; lateral structure; Connectors; Contacts; Cutoff frequency; Doping; Educational institutions; Electrodes; Germanium silicon alloys; Heterojunction bipolar transistors; Noise figure; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306169
