Low resistance thin Al film by simple sputtering deposition

Author

Noge, S. ; Ueno, H. ; Hohkawa, K. ; Yoshikawa, S.

Author_Institution

Kanagawa Inst. of Technol., Japan

Volume

1

fYear

1995

fDate

7-10 Nov 1995

Firstpage

379

Abstract

Deposition of a low resistance-smooth surface-thin metal film is one of the most important technologies for fabricating ultrahigh frequency surface acoustic wave devices. In this paper, we tried to deposit the aluminum film by using a simple standard sputtering system. We have studied the mechanism of growing steps of the films by measuring surface structure using atomic force microscopy. By selecting proper conditions, we have succeeded in fabricating relatively low resistance film (16 nm/7.3 μΩ cm) with a flat surface

Keywords

UHF devices; aluminium; atomic force microscopy; electrical resistivity; metallic thin films; sputter deposition; surface acoustic wave devices; surface structure; Al; aluminum thin film; atomic force microscopy; fabrication; resistance; sputtering deposition; step growth; surface smoothness; surface structure; ultrahigh frequency surface acoustic wave device; Acoustic measurements; Acoustic waves; Aluminum; Atomic force microscopy; Atomic measurements; Force measurement; Frequency; Sputtering; Surface acoustic wave devices; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1995. Proceedings., 1995 IEEE

Conference_Location

Seattle, WA

ISSN

1051-0117

Print_ISBN

0-7803-2940-6

Type

conf

DOI

10.1109/ULTSYM.1995.495602

Filename

495602