Title :
Low resistance thin Al film by simple sputtering deposition
Author :
Noge, S. ; Ueno, H. ; Hohkawa, K. ; Yoshikawa, S.
Author_Institution :
Kanagawa Inst. of Technol., Japan
Abstract :
Deposition of a low resistance-smooth surface-thin metal film is one of the most important technologies for fabricating ultrahigh frequency surface acoustic wave devices. In this paper, we tried to deposit the aluminum film by using a simple standard sputtering system. We have studied the mechanism of growing steps of the films by measuring surface structure using atomic force microscopy. By selecting proper conditions, we have succeeded in fabricating relatively low resistance film (16 nm/7.3 μΩ cm) with a flat surface
Keywords :
UHF devices; aluminium; atomic force microscopy; electrical resistivity; metallic thin films; sputter deposition; surface acoustic wave devices; surface structure; Al; aluminum thin film; atomic force microscopy; fabrication; resistance; sputtering deposition; step growth; surface smoothness; surface structure; ultrahigh frequency surface acoustic wave device; Acoustic measurements; Acoustic waves; Aluminum; Atomic force microscopy; Atomic measurements; Force measurement; Frequency; Sputtering; Surface acoustic wave devices; Surface resistance;
Conference_Titel :
Ultrasonics Symposium, 1995. Proceedings., 1995 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-2940-6
DOI :
10.1109/ULTSYM.1995.495602
