Title :
Development on the high-speed bipolar transistor with BF/sub 2/-implanted thin base
Author :
Qiudong, YANG ; Rongqiang, Li ; Kaizhou, Tan ; Jing, Zhang ; Yi, ZHONG ; KaiQuan, He ; Yukui, Liu
Author_Institution :
Nat. Lab. of Analog ICs, Sichuan Inst. of Solid-State Circuits, Chongqing
Abstract :
The polysilicon emitter bipolar process technology in which BF2-implanted base layer and rapid thermal anneal (RTA) are used has been reported. The process and device have been simulated by TSUPREM4 and MEDICI software respectively. High-speed NPN Transistor with beta of 160, fT of 9.5GHz and BVCEO of 6.0V has been achieved. Based on the NPN transistor, broad-band amplifier with bandwidth of 1.48GHz and gain of 23.2dB has been developed
Keywords :
bipolar transistors; boron compounds; p-n heterojunctions; rapid thermal annealing; wideband amplifiers; 1.48 GHz; 23.2 dB; 6.0 V; 9.5 GHz; BF2; MEDICI software; RTA; TSUPREM4 software; broad-band amplifier; high-speed NPN transistor; high-speed bipolar transistor; implanted thin base; polysilicon emitter bipolar process; rapid thermal annealling; Bandwidth; Bipolar transistors; Boron; Cutoff frequency; Electron emission; Epitaxial growth; Metallization; Rapid thermal annealing; Rapid thermal processing; Sputtering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306171
