Title :
A new dual-material gate LDMOS for RF power amplifiers
Author :
Ke, Dao-ming ; Liu, Qi ; Chen, Jun-ning ; Gao, Shan ; Liu, Lei
Author_Institution :
Dept. of Microelectron., Anhui Univ., Hefei
Abstract :
In this paper, a novel silicon RF lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure, using an effective concept of dual-material gate (DMG), is proposed. The gate of the DMG-LDMOS consists of S-gate (the first gate approaching source with high workfunction material p+ poly) and D-gate (the second gate approaching drain with low workfunction material n+ poly). The MEDICI simulations reveal that the DMG-LDMOS can reduce the peak electric field of drain, enhance transconductance and breakdown voltage, which result in a more rapidly acceleration of carriers in the channel and a screening effect to suppress hot carrier effects
Keywords :
MOSFET; circuit simulation; power amplifiers; radiofrequency amplifiers; LDMOSFET structure; MEDICI simulations; dual-material gate LDMOS; lateral double-diffused metal oxide semiconductor field effect transistor; radiofrequency power amplifiers; workfunction material n+ poly; workfunction material p+ poly; Acceleration; Double-gate FETs; Hot carrier effects; Medical simulation; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor materials; Silicon; Transconductance;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306173
