Analysis of SOI RESURF structure with charge sharing concept

Author

Yang, Wenwei ; Yu, Yuehui ; Yu, Zhiping ; Tian, Lilin

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing

fYear

2006

fDate

Oct. 2006

Firstpage

245

Lastpage

247

Abstract

A simple one-dimensional (1-D) analytical method is proposed to analyze the breakdown properties of silicon-on-insulator (SOI) reduced surface field (RESURF) structure. Based on charge sharing concept, this approach transforms the inherent two-dimensional (2-D) effects into a simple 1-D equivalent depending on device parameters. It is first found that given the silicon thickness, the thicker buried oxide (BOX) maybe unexpectedly reduce the breakdown voltage. Device designers could minimize the on-resistance and maximize the breakdown voltage through the optimal condition provided by this method, which is suitable both in the partial and full depletion cases. The analytical results are verified by the comparisons with experimental data and numerical simulations

Keywords

buried layers; electric breakdown; numerical analysis; silicon-on-insulator; 1D analytical method; SOI RESURF structure; breakdown properties; breakdown voltage; charge sharing concept; numerical simulations; reduced surface field structure; silicon-on-insulator; thicker buried oxide; Diodes; Doping; Electric breakdown; Information analysis; Integrated circuit technology; Isolation technology; Microelectronics; Numerical simulation; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306174

Filename

4098074