A novel approach to compare the charge buildup induced by co-60 and X-ray radiation in SOI buried oxides

X-ray and Co-60 irradiations caused large differences in charge buildup in SOI buried oxides because of the various electron-hole charge yield and dose enhancement effects. Dose enhancement effects are monitored with standard SOI NMOS transistors by measuring back-gate threshold shifts due to oxide-trapped charge. We have demonstrated that the device response to X-ray radiation can be used to predict the relative device response to Co-60 irradiations based on the characteristics of dose enhancement effects, in conjunction with the different charge yield of X-ray and Co-60 irradiations for different bias configurations