A novel approach to compare the charge buildup induced by co-60 and X-ray radiation in SOI buried oxides

Author

Tian, H. ; Zhang, Zh.X. ; Zhang, E.X. ; He, W. ; Yang, H. ; Yu, W.J. ; Wang, X.

Author_Institution

Chinese Acad. of Sci., Shanghai Inst. of Microsyst. & Inf. Technol.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

257

Lastpage

259

Abstract

X-ray and Co-60 irradiations caused large differences in charge buildup in SOI buried oxides because of the various electron-hole charge yield and dose enhancement effects. Dose enhancement effects are monitored with standard SOI NMOS transistors by measuring back-gate threshold shifts due to oxide-trapped charge. We have demonstrated that the device response to X-ray radiation can be used to predict the relative device response to Co-60 irradiations based on the characteristics of dose enhancement effects, in conjunction with the different charge yield of X-ray and Co-60 irradiations for different bias configurations

Keywords

MOSFET; X-ray effects; buried layers; fullerenes; radiation hardening (electronics); silicon-on-insulator; Co-60 irradiations; SOI NMOS transistors; SOI buried oxides; X-ray irradiations; X-ray radiation; back-gate threshold shifts; charge buildup; dose enhancement effects; electron-hole charge yield; oxide-trapped charge; Back; Helium; Informatics; Information technology; Laboratories; MOSFETs; Medical simulation; Packaging; Radiative recombination; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306178

Filename

4098078