A novel structure of non-planar RF spiral inductor based on silicon

Author

Tang, Shenqun ; Shi, Yanling ; Luo, Tianxing ; Ding, Yanfang ; Wang, Yong ; Zhu, Jun ; Chen, Shoumian ; Zhao, Yunhang

Author_Institution

Dept. of Electr. Eng., East China Normal Univ., Shanghai

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

269

Lastpage

271

Abstract

In this paper, a novel structure of non-planar inductor based on silicon is presented. The simulation plot of the magnetic distribution reveals that magnetic field reaches its maximum intensity near the inner turns of planar inductor, so it is necessary to deal with the peak value of the magnetic field in the centre of the inductor which causes great substrate loss. An extra layer of silicon dioxide under central several turns of the inductor is proposed in this novel design, and then the inductor becomes non-planar. The simulation results show this method can increase the peak Q factor by nearly 10%

Keywords

elemental semiconductors; inductors; magnetic fields; radiofrequency integrated circuits; silicon; silicon compounds; Q factor; SiO₂; magnetic distribution; magnetic field; nonplanar RF spiral inductor; planar inductor; silicon dioxide; substrate loss; Inductors; Magnetic fields; Magnetic flux; Magnetic losses; Q factor; Radio frequency; Radiofrequency integrated circuits; Silicon; Spirals; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306182

Filename

4098082