Development on Si optoelectronic receiving and processing chip

Author

Weidong, Yang ; Zhengfan, Zhang ; Li Kaicheng ; Hongqi, Ou ; Wengang, Huang

Author_Institution

National Key Labs. of Analog IC of China, CETC, Chongqing

fYear

2006

fDate

Oct. 2006

Firstpage

275

Lastpage

277

Abstract

In this study, a monolithic optoelectronic integrated circuit (OEIC), in which a photodiode detector and a bipolar integrated circuit for reception and amplification are integrated on the same silicon substrate, is described. With the new process technology, the layout of optical and electronic devices is designed, and the processes of optical and electronic devices are run. Thus a good way of developing high performance, high reliability, cost effective optoelectronic integrated circuit has been found

Keywords

bipolar integrated circuits; elemental semiconductors; integrated optoelectronics; photodiodes; silicon; OEIC; Si; Si optoelectronic processing chip; Si optoelectronic receiving chip; bipolar integrated circuit; electronic devices; monolithic optoelectronic integrated circuit; optical devices; photodiode detector; Bipolar integrated circuits; Detectors; Integrated circuit technology; Monolithic integrated circuits; Optical design; Optical devices; Optoelectronic devices; Photodiodes; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306205

Filename

4098084