Title :
Silicon optical emitter in CMOS technology
Author :
Chen, Hong-Da ; Liu, Hai-Jun ; Huang, Bei-Ju ; Gu, Ming ; Liu, Jin-Bin
Author_Institution :
CAS, Inst. of Semicond., Beijing
Abstract :
A silicon optical emitter, including a light emitting device (LED) and a LED driver circuit, was realized in a standard 0.35mum CMOS technology. The LED operates in reverse breakdown mode and can be turned on at 8.3V. An output optical power of 13.6 nW was measured at 10V and 100mA, and the calculated emitted intensity was more than 1 mW/cm2 . The optical spectrum of the silicon LED is between 500-820nm with a clear peak near 770nm
Keywords :
CMOS integrated circuits; driver circuits; elemental semiconductors; integrated optoelectronics; light emitting diodes; silicon; 0.35 micron; 10 V; 100 mA; 13.6 nW; 8.3 V; CMOS technology; LED driver circuit; Si; light emitting device; optical spectrum; output optical power; reverse breakdown mode; silicon LED; silicon optical emitter; CMOS technology; Differential amplifiers; Driver circuits; Integrated circuit technology; Light emitting diodes; Optical interconnections; Optical superlattices; Silicon; Stimulated emission; Very large scale integration;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306206
