DocumentCode :
3463632
Title :
"Choices for future interconnect materials and processing"
Author :
Lu, Toh-Ming ; Gregory Ten Eyck
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY
fYear :
2006
fDate :
Oct. 2006
Firstpage :
287
Lastpage :
290
Abstract :
For the next couple of generations, physical vapor deposition (PVD) for interconnect metal barriers and seeds appears to be extendable. At the same time a variety of atomic layer deposition (ALD) techniques are become available replacement options. New barrier materials such as Ru have also been considered. In this paper we discuss the motivations of these developments and the challenges for the implementation of these ideas
Keywords :
atomic layer deposition; integrated circuit interconnections; atomic layer deposition techniques; interconnect materials; interconnect metal barriers; physical vapor deposition; Atherosclerosis; Chemical vapor deposition; Conductivity; Dielectric constant; Dielectric materials; Electrons; Plasma temperature; Scattering; Surface treatment; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306209
Filename :
4098088
Link To Document :
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