Title :
"Choices for future interconnect materials and processing"
Author :
Lu, Toh-Ming ; Gregory Ten Eyck
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY
Abstract :
For the next couple of generations, physical vapor deposition (PVD) for interconnect metal barriers and seeds appears to be extendable. At the same time a variety of atomic layer deposition (ALD) techniques are become available replacement options. New barrier materials such as Ru have also been considered. In this paper we discuss the motivations of these developments and the challenges for the implementation of these ideas
Keywords :
atomic layer deposition; integrated circuit interconnections; atomic layer deposition techniques; interconnect materials; interconnect metal barriers; physical vapor deposition; Atherosclerosis; Chemical vapor deposition; Conductivity; Dielectric constant; Dielectric materials; Electrons; Plasma temperature; Scattering; Surface treatment; Wires;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306209