Title :
An advanced bipolar device-the fully depleted camel structure
Author :
Al-Bustani, A. ; Yaseen, N.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Central Lancashire, Preston, UK
Abstract :
Camel devices are advanced bipolar structures with fully depleted base layers. In this paper, an analysis is presented to study these new devices and to account for the effect(s) of design parameters such as the intermediate layer width, the emitter doping density and effective length on the devices´ performance. The results obtained show a strong dependence of the transistor characteristics on the design parameters
Keywords :
bipolar transistors; semiconductor device models; advanced bipolar device; design parameters; effective length; emitter doping density; fully depleted base layers; fully depleted camel structure; intermediate layer width; transistor characteristics; Current density; Cutoff frequency; Equations; Linear discriminant analysis; Microwave transistors; Nonhomogeneous media; Semiconductor devices; Semiconductor impurities; Thermionic emission; Voltage;
Conference_Titel :
Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
Conference_Location :
Rodos
Print_ISBN :
0-7803-3650-X
DOI :
10.1109/ICECS.1996.584553
