Title :
A study on the noise parameters of active devices based on a circuit model approach [HEMTs]
Author :
Caddemi, A. ; Sannino, M.
Author_Institution :
Dipt. di Ingegneria Elettrica, Palermo Univ., Italy
Abstract :
Noise parameters of high electron mobility transistors (HEMT) at microwaves are a subject of active research since the knowledge of their performance is of key importance to the use of these devices in low-noise applications. In this work, a simple noise model associated to the basic equivalent circuit of an HEMT has been employed to derive the analytical expressions for the device noise parameters F0, Γ0 and N. Such expressions have then been analyzed for establishing some fundamental relationships, as well as the expected noise performance of the device when the parasitic elements representing package effects are added
Keywords :
equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; 8 to 16 GHz; active devices; circuit model approach; equivalent circuit; high electron mobility transistors; low-noise applications; microwave HEMT; noise model; noise parameters; package effects; parasitic elements; Active noise reduction; Circuit noise; Equivalent circuits; HEMTs; Microwave devices; Noise figure; Noise generators; Noise measurement; Packaging; Temperature;
Conference_Titel :
Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
Conference_Location :
Rodos
Print_ISBN :
0-7803-3650-X
DOI :
10.1109/ICECS.1996.584554
