Title :
A 2.7V 9.8Gb/s Burst-Mode TIA with Fast Automatic Gain Locking and Coarse Threshold Extraction
Author :
De Ridder, Tine ; Ossieur, Peter ; Baekelandt, Bart ; Mélange, Cedric ; Bauwelinck, Johan ; Ford, Colin ; Qiu, Xing-Zhi ; Vandewege, Jan
Author_Institution :
Ghent Univ., Ghent
Abstract :
Today´s broadband access is moving towards PONs at 10Gb/s. This requires a burst-mode receiver to support the TDMA protocol used in its upstream path. Such a receiver consists of a burst-mode transimpedance amplifier (BM-TIA) which largely dictates the performance of the receiver and a burst-mode post-amplifier (BM-PA) that removes all dc-offsets present in the BM-TIA signal and regenerates the logical amplitude information. The BM-TIA is fabricated in a 0.25mum SiGe BiCMOS technology. The TIA is mounted together with a PIN photodiode in a butterfly package. These measurements show that the gain locking happens within 4.5ns from the start of the burst.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; amplifiers; optical fibre networks; optical receivers; p-i-n photodiodes; time division multiple access; BiCMOS technology; PIN photodiode; PON; SiGe; TDMA protocol; automatic gain locking; bit rate 9.8 Gbit/s; burst-mode TIA; burst-mode post-amplifier; burst-mode receiver; burst-mode transimpedance amplifier; butterfly package; coarse threshold extraction; dc-offsets; logical amplitude information; passive optical network; size 0.25 mum; voltage 2.7 V; Capacitance; Degradation; Detectors; Germanium silicon alloys; Optical fiber communication; Optical receivers; Resistors; Silicon germanium; Threshold voltage; Transconductance;
Conference_Titel :
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2010-0
Electronic_ISBN :
978-1-4244-2011-7
DOI :
10.1109/ISSCC.2008.4523136
