Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

Author

Popa, Laura C. ; Weinstein, D.

Author_Institution

HybridMEMS Group, Massachusetts Inst. of Technol., Cambridge, MA, USA

fYear

2013

fDate

16-20 June 2013

Firstpage

2461

Lastpage

2464

Abstract

This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas (2DEG) as a second electrode. In the off state, this 2DEG can be depleted by applying a negative bias to the top electrode, suppressing transduction and reducing capacitive loading. Switchable AlGaN/GaN resonators are demonstrated from 240MHz to 3.5GHz with frequency-quality factor products up to 1.7×10¹² in air. Switching is shown in both devices with passive piezoelectric and HEMT sensing, with >19dB suppression in the off state.

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; bulk acoustic wave devices; gallium compounds; high electron mobility transistors; micromechanical resonators; piezoelectric transducers; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas; 2DEG; AlGaN-GaN; AlGaN/GaN MEMS resonators; HEMT sensing; Schottky electrode; bulk acoustic resonators; frequency 240 MHz to 3.5 GHz; frequency-quality factor; negative bias; passive piezoelectric sensing; switchable piezoelectric transduction; switching mechanism; Aluminum gallium nitride; Electrodes; Gallium nitride; HEMTs; MODFETs; Switches; Transducers; GaN; HEMT; MEMS resonators; Resonant Body Transistor; piezoelectric transducer;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6627304

Filename

6627304