• DocumentCode
    3463793
  • Title

    Ni silicide and germanide technology for contacts and metal gates in MOSFET applications

  • Author

    Zaima, Shigeaki ; Nakatsuka, Osamu ; Kondo, Hiroki ; Sakashita, Mitsuo ; Sakai, Akira ; Ogawa, Masaki

  • Author_Institution
    Dept. of Crystalline Mater. Sci., Nagoya Univ.
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    322
  • Lastpage
    325
  • Abstract
    In this study, we report Ni silicide and germanide technology for ohmic contacts and metal gates in MOSFET applications. We have systematically investigated the crystalline structures and the electrical properties of NiSi and Ni(Si1-alphaGe;alpha) layers formed on Si and Si1-x-yGexCy, respectively. We have also characterized Ni germanides for metal gates with various metal-germanium composition ratios
  • Keywords
    MOSFET; germanium compounds; nickel compounds; ohmic contacts; silicon compounds; MOSFET applications; Ni germanide technology; Ni silicide technology; NiSiGe; crystalline structures; electrical properties; metal gates; ohmic contacts; Annealing; Conductivity; Contacts; Crystallization; MOSFET circuits; Nickel; Silicides; Substrates; Temperature; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306218
  • Filename
    4098097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3463793