DocumentCode :
3463793
Title :
Ni silicide and germanide technology for contacts and metal gates in MOSFET applications
Author :
Zaima, Shigeaki ; Nakatsuka, Osamu ; Kondo, Hiroki ; Sakashita, Mitsuo ; Sakai, Akira ; Ogawa, Masaki
Author_Institution :
Dept. of Crystalline Mater. Sci., Nagoya Univ.
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
322
Lastpage :
325
Abstract :
In this study, we report Ni silicide and germanide technology for ohmic contacts and metal gates in MOSFET applications. We have systematically investigated the crystalline structures and the electrical properties of NiSi and Ni(Si1-alphaGe;alpha) layers formed on Si and Si1-x-yGexCy, respectively. We have also characterized Ni germanides for metal gates with various metal-germanium composition ratios
Keywords :
MOSFET; germanium compounds; nickel compounds; ohmic contacts; silicon compounds; MOSFET applications; Ni germanide technology; Ni silicide technology; NiSiGe; crystalline structures; electrical properties; metal gates; ohmic contacts; Annealing; Conductivity; Contacts; Crystallization; MOSFET circuits; Nickel; Silicides; Substrates; Temperature; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306218
Filename :
4098097
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3463793
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