ALD growth of Ru on RIE-pretreated TaN substrate

Author

Zhou, Mi ; Chen, Tao ; Tan, Jing-jing ; Zhao, Feng ; Ru, Guo-Ping ; Li, Bingzong ; Qu, Xin-Ping

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

330

Lastpage

332

Abstract

The polycrystalline ruthenium films were grown on TaN substrates by atomic layer deposition at temperatures ranging from 300 degC to 330 degC using bis(cyclopentadienyl) ruthenium [RuCp₂] and oxygen as precursors. Pretreatment of reactive ion etching (RIE) was performed to the underlying substrates before deposition in order to improve the nucleation. Various tests were carried out to characterize the as-deposited samples. The results showed that the nucleation density of Ru films with RIE pretreatment to the underlying TaN substrates was much higher than that of the ones without any pretreatment. But still the deposited Ru films were not very uniform and there was a Ta_xO_y film between Ru and TaN caused by thermal ALD process

Keywords

atomic layer deposition; crystal growth; nucleation; polymer films; ruthenium; ruthenium compounds; sputter etching; tantalum compounds; 300 to 330 C; ALD; RIE; Ru; atomic layer deposition; bis(cyclopentadienyl) ruthenium; film deposition; nucleation density; polycrystalline ruthenium films; reactive ion etching; substrate growth; Atomic force microscopy; Atomic layer deposition; Conductivity; Photoelectron microscopy; Scanning electron microscopy; Semiconductor films; Sputtering; Substrates; Temperature distribution; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306220

Filename

4098099