DocumentCode :
3463855
Title :
An 820μW 9b 40MS/s Noise-Tolerant Dynamic-SAR ADC in 90nm Digital CMOS
Author :
Giannini, Vito ; Nuzzo, Pierluigi ; Chironi, Vincenzo ; Baschirotto, Andrea ; Van der Plas, Geert ; Craninckx, Jan
Author_Institution :
lMEC, Leuven
fYear :
2008
fDate :
3-7 Feb. 2008
Firstpage :
238
Lastpage :
610
Abstract :
Current trends in analog/mixed-signal design for battery-powered devices demand the adoption of cheap and power-efficient ADCs. SAR architectures have been recently demonstrated as able to achieve high power efficiency in the moderate-resolution/medium- bandwidth range in Craninckx, J. and Van der Plas, G., (2007). However, when the comparator determines in first instance the overall performance, as in most SAR ADCs, comparator thermal noise can limit the maximum achievable resolution. More than 1 and 2 ENOB reductions are observed in Craninckx, J. and Van der Plas, G., (2007) and Kuttner, F., (2002), respectively, because of thermal noise, and degradations could be even worse with scaled supply voltages and the extensive use of dynamic regenerative latches without pre-amplification. Unlike mismatch, random noise cannot be compensated by calibration and would finally demand a quadratic increase in power consumption unless alternative circuit techniques are devised.
Keywords :
CMOS integrated circuits; analogue-digital conversion; comparators (circuits); flip-flops; mixed analogue-digital integrated circuits; thermal noise; ENOB reductions; SAR architectures; analog/mixed-signal design; battery-powered devices; comparator thermal noise; digital CMOS; dynamic regenerative latches; noise-tolerant dynamic-SAR ADC; power consumption; random noise; supply voltages; Adders; Calibration; Energy consumption; Error correction; Frequency conversion; Phase noise; Phased arrays; Sampling methods; Solid state circuits; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2010-0
Electronic_ISBN :
978-1-4244-2011-7
Type :
conf
DOI :
10.1109/ISSCC.2008.4523145
Filename :
4523145
Link To Document :
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