DocumentCode
3463884
Title
Study of re-sputtering effect on metallization for Cu interconnect
Author
Jiwei Zhang ; Xiu-Lan Cheng ; Ting-Bin Wu ; Bai-Bing Ni ; Jiang, Rui ; En-Feng Liu ; Qi-Yu Huang ; Hua Zhou
Author_Institution
Sch. of Microelectron., Shanghai Jiao Tong Univ.
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
333
Lastpage
335
Abstract
This paper is related with the barrier-and-seed(B/S) process of Cu metallization, discussed the re-sputtering function of barrier process, and disclosed the factors that influence the re-sputtering process. A scheme is proposed to improve the performance of the barrier and seed process
Keywords
copper; metallisation; sputtering; Cu interconnect; Cu metallization; barrier and seed process; barrier process; resputtering effect; Circuits; Copper; Electric variables measurement; Electrical resistance measurement; Electrons; Metallization; Probes; Surface impedance; Testing; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306221
Filename
4098100
Link To Document