Title :
Damascene process for air-gap Cu interconnects using sacrificial layer HSQ
Author :
Hsieh, Cheng-Liang ; Lin, Ming-Chang ; Chen, Henry J H ; Yeh, Fon-Shan
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
We proposed and demonstrated an air-gap Cu interconnects using the damascene architecture and HSQ (hydrogen silsesquioxane) wet etching sacrificial process. The SEM cross-section images of Cu air-gap interconnect with different diffusion barriers fabricated by using the damascene architecture and HSQ sacrificial process are investigated. The line-to-line leakage current conduction mechanisms of air-gap Cu interconnects with the lining layer Ta was studies in our work. The leakage current mechanism of air-gap Cu interconnects using the novel HSQ sacrificial process is Schottky emission. The process is simple, performed at room temperature, and easy to integrate with the Cu damascene architecture for the future air-gap Cu interconnection applications
Keywords :
Schottky barriers; air gaps; copper; etching; hydrogen compounds; integrated circuit interconnections; scanning electron microscopy; SEM; Schottky emission; air gap Cu interconnects; damascene process; diffusion barriers; hydrogen silsesquioxane; leakage current conduction; sacrificial layer; wet etching; Air gaps; Carbon dioxide; Copper; Dielectrics; Electronic mail; Hydrogen; Integrated circuit interconnections; Leakage current; Temperature; Wet etching;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306222