Title :
Tungsten carbides as a diffusion barrier for Cu metallization
Author :
Xie, Qi ; Jiang, Yu-Long ; Detavernier, C. ; Van Meirhaeghe, R.L. ; Qu, Xin-Ping
Abstract :
Carbides of refractory metals have been used as diffusion barriers due to their high melting point and good thermal and mechanical stability. In this work binary WC films have been investigated as Cu diffusion barriers by using ex-situ sheet resistance (Rs), X-ray diffraction (XRD) measurement and in-situ laser light scattering measurements. It was found that the WC film has stronger oxidation resistance and a comparable diffusion barrier performance as W films. However, the Cu agglomeration was severe for the Cu/WC/Si structures
Keywords :
X-ray diffraction; copper; diffusion barriers; mechanical stability; metallisation; refractories; thermal stability; tungsten compounds; Cu metallization; WC; X-ray diffraction; agglomeration; binary WC films; diffusion barrier; laser light scattering; mechanical stability; oxidation resistance; refractory metals; sheet resistance; thermal stability; Electrical resistance measurement; Metallization; Optical films; Optical refraction; Optical wavelength conversion; Thermal stability; Tungsten; X-ray diffraction; X-ray lasers; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306224
