Copper pulse plating on Ru/TaSiN barrier

Author

Zeng, Lei ; Xu, Sai-Sheng ; Tan, Jing-jing ; Zhang, Li-Feng ; Zhang, Wei ; Wang, Li-Kang ; Qu, Xin-Ping

Author_Institution

Fudan-Novellus Interconnect Res. Center, Fudan Univ., Shanghai

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

345

Lastpage

347

Abstract

The properties of pulse plated copper electrodeposits (1 mum) on ruthenium (5nm)/TaSiN (5nm) diffusion barrier with current density ranging from 2 to 20 A/dm² are studied. The resistivity of the Cu film is about 2.7muOmegamiddotcm. A (111) preferential orientation is found in almost all cases, which would be good to electromigration performance. Grain size of Cu electrodeposits reduces with increasing current density. Different growth mode is found in low and high current densities. The surface morphology of the copper electrodeposits is very rough at low current densities, due to the bigger grain size

Keywords

current density; diffusion barriers; electromigration; electroplating; surface morphology; 1 micron; 5 nm; copper electrodeposits; copper pulse plating; current density; diffusion barrier; electromigration; resistivity; surface morphology; Atomic force microscopy; CMOS technology; Conductivity; Copper; Current density; Electromigration; Grain size; Polarization; Scanning electron microscopy; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306225

Filename

4098104