Title :
Copper pulse plating on Ru/TaSiN barrier
Author :
Zeng, Lei ; Xu, Sai-Sheng ; Tan, Jing-jing ; Zhang, Li-Feng ; Zhang, Wei ; Wang, Li-Kang ; Qu, Xin-Ping
Author_Institution :
Fudan-Novellus Interconnect Res. Center, Fudan Univ., Shanghai
Abstract :
The properties of pulse plated copper electrodeposits (1 mum) on ruthenium (5nm)/TaSiN (5nm) diffusion barrier with current density ranging from 2 to 20 A/dm2 are studied. The resistivity of the Cu film is about 2.7muOmegamiddotcm. A (111) preferential orientation is found in almost all cases, which would be good to electromigration performance. Grain size of Cu electrodeposits reduces with increasing current density. Different growth mode is found in low and high current densities. The surface morphology of the copper electrodeposits is very rough at low current densities, due to the bigger grain size
Keywords :
current density; diffusion barriers; electromigration; electroplating; surface morphology; 1 micron; 5 nm; copper electrodeposits; copper pulse plating; current density; diffusion barrier; electromigration; resistivity; surface morphology; Atomic force microscopy; CMOS technology; Conductivity; Copper; Current density; Electromigration; Grain size; Polarization; Scanning electron microscopy; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306225
