DocumentCode
3463961
Title
Characterization of HDP FSG process
Author
Hu, Zheng-Jun ; Li, Wen-Qiang ; Chen, Shou-Mian ; Shi, Hong ; Qin, Wen-Fang
Author_Institution
R&D Center, Shanghai IC
fYear
2006
fDate
Oct. 2006
Firstpage
348
Lastpage
350
Abstract
Full factorial design (2 level) is used to study the F% influenced by the different process parameters, gas flow, power etc. X-SEM study on gap-filling and metal top line clipping (metal clipping) is also performed. High temperature vacuum baking is used to study the fluorinated-silicate-glass (FSG) film stability. Dielectric constant of bulk FSG with different F% is extracted by MIS structure
Keywords
dielectric materials; filling; permittivity; scanning electron microscopy; HDP FSG process; MIS structure; X-SEM; dielectric constant; film stability; fluorinated silicate glass film; full factorial design; gap filling; high temperature vacuum baking; metal clipping; Bonding; Dielectric constant; Fluid flow; Optical films; Research and development; Silicon; Stability; Stress measurement; Temperature; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306248
Filename
4098105
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