Title :
Characterization of HDP FSG process
Author :
Hu, Zheng-Jun ; Li, Wen-Qiang ; Chen, Shou-Mian ; Shi, Hong ; Qin, Wen-Fang
Author_Institution :
R&D Center, Shanghai IC
Abstract :
Full factorial design (2 level) is used to study the F% influenced by the different process parameters, gas flow, power etc. X-SEM study on gap-filling and metal top line clipping (metal clipping) is also performed. High temperature vacuum baking is used to study the fluorinated-silicate-glass (FSG) film stability. Dielectric constant of bulk FSG with different F% is extracted by MIS structure
Keywords :
dielectric materials; filling; permittivity; scanning electron microscopy; HDP FSG process; MIS structure; X-SEM; dielectric constant; film stability; fluorinated silicate glass film; full factorial design; gap filling; high temperature vacuum baking; metal clipping; Bonding; Dielectric constant; Fluid flow; Optical films; Research and development; Silicon; Stability; Stress measurement; Temperature; Thermal stresses;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306248
