Title :
DC and pulsed DC stress evolution in copper interconnects
Author :
Zhu, Lin ; Liu, Hong-xia
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an
Abstract :
Stress in copper interconnects under the direct current (DC) and pulsed DC bias, considering the impact of barrier layer, is calculated numerically. The calculation results show that the barrier layer used to stop the copper diffusion also reduces the stress in interconnects. The extent in reduction of stress under DC case is higher than that under the pulsed DC bias
Keywords :
copper; diffusion barriers; integrated circuit interconnections; stress effects; barrier layer; copper diffusion; copper interconnects; direct current; pulsed DC bias; Aluminum; Chemicals; Copper; Grain boundaries; Integrated circuit interconnections; Microelectronics; Semiconductor materials; Tensile stress; Thermal stresses; Wide band gap semiconductors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306250
