Performance characterization of integrated gate commutated thyristors

Author

Gutierrez, Monica ; Venkataramanan, Giri ; Sundaram, Ashok

Author_Institution

Dept. of Electr. Eng., Montana State Univ., Bozeman, MT, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

359

Abstract

Power semiconductor devices that combine the technology of MOS turn-off and bipolar conduction have been introduced for operation at at high voltage and high current levels. Integrated gate commutated thyristor (IGCT) is a switching device based on the gate turn off thyristor. This paper is devoted to presenting the results from a study performed to examine the operating characteristics of IGCT. The study included experimental measurements of on-state properties and switching characteristics under snubberless hard switching. Turn off losses, device switching delay time, storage time, transition time and on-state losses are characterized. In addition to the experimental results, the paper also presents a brief review of operation of the device and the experimental procedure used in the study

Keywords

commutation; power semiconductor switches; thyristors; MOS turn-off; bipolar conduction; device switching delay time; gate turn off thyristor; high current; high voltage; integrated gate commutated thyristors; on-state losses; on-state properties; performance characterization; power semiconductor devices; snubberless hard switching; storage time; switching characteristics; transition time; turn off losses; Assembly; Circuits; Delay effects; Insulated gate bipolar transistors; Low voltage; Optical control; Power conversion; Power semiconductor devices; Power semiconductor switches; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE

Conference_Location

Phoenix, AZ

ISSN

0197-2618

Print_ISBN

0-7803-5589-X

Type

conf

DOI

10.1109/IAS.1999.799981

Filename

799981