• DocumentCode
    3464044
  • Title

    How materials innovations will lead to device revolution?

  • Author

    Fortunato, Elvira ; Martins, Rodrigo

  • Author_Institution
    Mater. Sci. Dept., UNINOVA, Caparica, Portugal
  • fYear
    2015
  • fDate
    21-25 June 2015
  • Firstpage
    884
  • Lastpage
    887
  • Abstract
    Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. The key components are wide band gap semiconductors, where oxides of different origin play an important role, not only as passive component but also as active component, similar to what we observe in conventional semiconductors like silicon. In this paper we present the recent progress in n- and p-type oxide based thin film transistors (TFT) produced by rf magnetron sputtering and we will summarize the major milestones already achieved with this emerging and very promising technology.
  • Keywords
    flat panel displays; silicon; sputter deposition; thin film transistors; wide band gap semiconductors; RF magnetron sputtering; Si; TFT; active component; device revolution; flat panel display; material innovations; n-type oxide; p-type oxide; passive component; silicon; thin film transistors; transparent electronics; wide band gap semiconductors; Annealing; Consumer electronics; Iron; Silicon; Sputtering; Temperature; Thin film transistors; Metal Oxide Thin Films; Thin Film Transistors; Transparent Electronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
  • Conference_Location
    Anchorage, AK
  • Type

    conf

  • DOI
    10.1109/TRANSDUCERS.2015.7181065
  • Filename
    7181065