DocumentCode
3464044
Title
How materials innovations will lead to device revolution?
Author
Fortunato, Elvira ; Martins, Rodrigo
Author_Institution
Mater. Sci. Dept., UNINOVA, Caparica, Portugal
fYear
2015
fDate
21-25 June 2015
Firstpage
884
Lastpage
887
Abstract
Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. The key components are wide band gap semiconductors, where oxides of different origin play an important role, not only as passive component but also as active component, similar to what we observe in conventional semiconductors like silicon. In this paper we present the recent progress in n- and p-type oxide based thin film transistors (TFT) produced by rf magnetron sputtering and we will summarize the major milestones already achieved with this emerging and very promising technology.
Keywords
flat panel displays; silicon; sputter deposition; thin film transistors; wide band gap semiconductors; RF magnetron sputtering; Si; TFT; active component; device revolution; flat panel display; material innovations; n-type oxide; p-type oxide; passive component; silicon; thin film transistors; transparent electronics; wide band gap semiconductors; Annealing; Consumer electronics; Iron; Silicon; Sputtering; Temperature; Thin film transistors; Metal Oxide Thin Films; Thin Film Transistors; Transparent Electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location
Anchorage, AK
Type
conf
DOI
10.1109/TRANSDUCERS.2015.7181065
Filename
7181065
Link To Document