Title :
Oxidation process of HfO/sub 2//SiO/sub 2//Si structures observed by high-resolution RBS
Author :
Ming, Zhao ; Nakajima, Kaoru ; Suzuki, Motofumi ; Kimura, Kenji ; Uematsu, Masashi ; Torii, Kazuyoshi ; Kamiyama, Satoshi ; Nara, Yasuo ; Watanabe, Heiji ; Shiraishi, Kenji ; Chikyow, Toyohiro ; Yamada, Keisaku
Author_Institution :
Dept. of Micro Eng., Kyoto Univ.
Abstract :
Oxidation process of HfO2/SiO2/Si(001) structures during annealing in dry oxygen is studied by high-resolution Rutherford backscattering spectroscopy. During the growth of the interfacial SiO2 layer, surface accumulation of Si is observed. This indicates that silicon species are emitted from the SiO 2/Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies. The behavior of oxygen during the growth of the interfacial SiO2 layer is also studied using 180 as a tracer. The observed 180 profile shows that atomic oxygen ions diffuse through HfO2 and SiO2 layers via an exchange mechanism
Keywords :
Rutherford backscattering; annealing; hafnium compounds; high-k dielectric thin films; oxidation; silicon; silicon compounds; Rutherford backscattering spectroscopy; Si(001); dielectric materials; interfacial layer; surface accumulation; Annealing; Atomic layer deposition; Backscatter; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Laboratories; Materials science and technology; Oxidation; Spectroscopy;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306260
