Title :
High-per formance, highly reliable HfSiON gate dielectric for low Vth system LSI´s
Author :
Yugami, J. ; Inoue, M. ; Tsujikawa, S. ; Mizutani, M. ; Nomura, K. ; Hayashi, T. ; Nishida, Y. ; Shiga, K. ; Tsuchimoto, J. ; Ohno, Y. ; Yoneda, M.
Author_Institution :
Process Technol. Dev. Div., RENESAS Technol. Corp., Itami
Abstract :
In this paper, the authors demonstrate the improvement of HfSiON pFET characteristics with F incorporation technique, which might be a powerful tool to lower Vth in pFET with both poly-Si and PC-FUSI gate. Using F implantation in channel region prior to HfSiON formation Vth lowering up to ~200mV is obtained without mobility degradation. Furthermore, impact of F incorporation in HfSiON is investigated from reliability aspect. Vth stability during negative bias temperature stress is drastically improved which can be associated with F passivation of defects in HfSiON
Keywords :
dielectric materials; field effect transistors; hafnium compounds; large scale integration; passivation; semiconductor device reliability; silicon compounds; F passivation; HfSiON; LSI; field effect transistors; gate dielectrics; large scale integration; mobility degradation; negative bias; pFET; temperature stress; Doping; FETs; Fabrication; High K dielectric materials; High-K gate dielectrics; Hydrogen; Plasma displays; Plasma temperature; Power engineering and energy; Reliability engineering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306261
