DocumentCode :
3464158
Title :
Pirani gauge based on alternative self-heating of silicon nanowire
Author :
Ruellan, J. ; Arcamone, J. ; Mercier, D. ; Dupre, C. ; Duraffourg, L.
Author_Institution :
LETI, CEA, Grenoble, France
fYear :
2013
fDate :
16-20 June 2013
Firstpage :
2568
Lastpage :
2571
Abstract :
This work reports on the realization of the smallest Pirani gauge ever, based upon highly-doped silicon nanowires. This paper details the fabrication process and the characterization of the thermal properties of Si nanowires, such as thermal conductivity and thermal coefficient of resistivity for various working temperatures in the 300K-700K range. A dynamic transduction technique, based on the 3-omega measurement is described and the device performances (i.e. sensitivity and signal-to-noise ratio) are measured. With the tested devices a resolution below 5%/Hz1/2 is obtained in the 0.1mbar-1bar range.
Keywords :
elemental semiconductors; nanofabrication; nanowires; pressure sensors; silicon; thermal conductivity; 3- omega measurement; Pirani gauge; Si; alternative self-heating; dynamic transduction technique; fabrication process; highly-doped silicon nanowires; pressure 0.1 bar to 1 bar; sensitivity; signal-to-noise ratio; temperature 300 K to 700 K; thermal coefficient of resistivity; thermal conductivity; thermal properties; Conductivity; Heating; Silicon; Temperature measurement; Temperature sensors; Thermal conductivity; 3-omega measurement; Pirani gauge; silicon nanowire; thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location :
Barcelona
Type :
conf
DOI :
10.1109/Transducers.2013.6627330
Filename :
6627330
Link To Document :
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