Analysis of 1/f noise for CMOS with high-k gate dielectrics

Author

Ohguro, T. ; Kojima, K. ; Iijima, R. ; Watanabe, T. ; Takayanagi, M. ; Momose, H.S. ; Ishimaru, K. ; Ishiuchi, H.

Author_Institution

Center for Semicond. Res. & Dev., Toshiba Corp. Semicond. Co., Yokohama

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

400

Lastpage

403

Abstract

HfSiON is one of the most promising alternative gate dielectric materials for low standby power (LSTP) application. Recently, DC performance, gate leakage current, and reliability have been reported. However, study of analog performances of CMOS with HfSiON gate dielectrics is not sufficient. In this paper, the authors discuss 1/f noise and matching of CMOS with HfSiON gate dielectrics and predict trends in S_vg with technology scaling according to the ITRS roadmap based on Mikoshiba´s model

Keywords

1/f noise; CMOS integrated circuits; dielectric materials; hafnium compounds; leakage currents; semiconductor device reliability; silicon compounds; 1/f noise; CMOS devices; HfSiON; gate leakage current; high-k gate dielectrics; Dielectrics; Electrodes; Hafnium; Leakage current; MOCVD; MOS devices; MOSFET circuits; Plasma immersion ion implantation; Plasma sources; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306262

Filename

4098119