Title :
La-based oxides for high-k gate dielectric application
Author :
Ahmet, Parhat ; Kakushima, Kuniyuki ; Tsutsui, Kazuo ; Sugii, Nobuyuki ; Hattori, Takeo ; Iwai, Hiroshi
Author_Institution :
Frontier Collaborative Res. Center, Tokyo Inst. of Technol.
Abstract :
Thermal stability of rare earth oxides La2O3/Y2O3 stack structure was studied. X-ray photoelectron spectroscopy (XPS) analysis revealed that Y2O3 layer suppresses the formation of SiO 2 at interface. It was found that mobility degradation in La-based gate dielectric MOSFETs during high temperature annealing can be prevented by inserting a thin Y2O3 interfacial layer
Keywords :
MOSFET; X-ray photoelectron spectra; dielectric materials; lanthanum compounds; rapid thermal annealing; silicon compounds; thermal stability; yttrium compounds; MOSFET; X-ray photoelectron spectroscopy; high temperature annealing; mobility degradation; rare earth oxides; thermal stability; Annealing; Dielectrics and electrical insulation; Heat treatment; High K dielectric materials; High-K gate dielectrics; MOSFETs; Silicon; Temperature; Thermal resistance; Thermal stability;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306264
