• DocumentCode
    3464312
  • Title

    Higher-k LaYOx films with strong moisture-robustness

  • Author

    Zhao, Yi ; Kita, Koji ; Kyuno, Kentaro ; Toriumi, Akira

  • Author_Institution
    Dept. of Mater. Eng., Tokyo Univ.
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    427
  • Lastpage
    429
  • Abstract
    The permittivities and the resistance to moisture of LaYOx (LYO) films annealed at 600degC with different Y concentrations are investigated. The permittivities of 40%Y-LYO film and 70%Y-LYO film are higher than 25. The high permittivities come from the well crystallized hexagonal phase of LYO films. For rare earth oxides, the hexagonal phase shows higher permittivity than the cubic phase due to the smaller molar volume of the hexagonal phase. Furthermore, the high permittivity LYO films (40%Y-LYO and 70%Y-LYO) show strong resistance to the moisture due to the introduction of Y2O3 which owns stronger resistance to the moisture than La2O3
  • Keywords
    high-k dielectric thin films; moisture; permittivity; LaYO; high-k dielectric thin films; moisture robustness; permittivity; Annealing; Crystallization; Electromagnetic wave absorption; Gold; Metal-insulator structures; Moisture; Optical films; Permittivity measurement; Semiconductor films; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306291
  • Filename
    4098126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3464312