DocumentCode :
3464312
Title :
Higher-k LaYOx films with strong moisture-robustness
Author :
Zhao, Yi ; Kita, Koji ; Kyuno, Kentaro ; Toriumi, Akira
Author_Institution :
Dept. of Mater. Eng., Tokyo Univ.
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
427
Lastpage :
429
Abstract :
The permittivities and the resistance to moisture of LaYOx (LYO) films annealed at 600degC with different Y concentrations are investigated. The permittivities of 40%Y-LYO film and 70%Y-LYO film are higher than 25. The high permittivities come from the well crystallized hexagonal phase of LYO films. For rare earth oxides, the hexagonal phase shows higher permittivity than the cubic phase due to the smaller molar volume of the hexagonal phase. Furthermore, the high permittivity LYO films (40%Y-LYO and 70%Y-LYO) show strong resistance to the moisture due to the introduction of Y2O3 which owns stronger resistance to the moisture than La2O3
Keywords :
high-k dielectric thin films; moisture; permittivity; LaYO; high-k dielectric thin films; moisture robustness; permittivity; Annealing; Crystallization; Electromagnetic wave absorption; Gold; Metal-insulator structures; Moisture; Optical films; Permittivity measurement; Semiconductor films; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306291
Filename :
4098126
Link To Document :
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