Title :
Dual-work-function modulation for Ni-FUSI metal gate CMOS technology
Author :
Zhou, Huajie ; Xu, Qiuxia
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing
Abstract :
This paper investigates the work function adjustment of Ni-FUSI metal gate. It is obvious that implanting dopant into poly-Si before silicidation can modulate the work function of Ni-FUSI metal gate efficiently. With the implantation of P-type or N-type dopants, such as BF2 and As or P, the work function of Ni-FUSI metal gate can be made higher or lower to satisfy the requirement of PMOS or NMOS
Keywords :
CMOS integrated circuits; MOSFET; arsenic; bismuth compounds; doping; nickel; phosphorus; work function; As; BF2; CMOS technology; FUSI metal gate; Ni; P; work function modulation; CMOS technology; Capacitance-voltage characteristics; Fabrication; MOS capacitors; MOS devices; Metals industry; Microelectronics; Nickel; Silicidation; Silicides;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306292
