Title :
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Author :
Zou, Xiao ; Xu, Jing-Ping ; Lai, P.T. ; Li, Chun-Xia ; Zhang, Xue-Feng
Author_Institution :
Dept. of Electron. Sci. & Technol., Dept. of Electron. Sci. & Technol., Wuhan
Abstract :
Gate-leakage model of n-Ge MOS capacitor with stacked high-k gate dielectric in inversion region is developed based on energy-band analysis and WKB approximation for hole tunneling. The validity of the model is checked for MOSFET with stacked high-K/interlayer gate dielectric, and simulated results exhibit good agreement with experimental data, indicating the applicability of the model for designing small-sized Ge MOS devices with stacked high-k gate dielectric
Keywords :
MOS capacitors; dielectric materials; germanium; MOS capacitor; MOS devices; WKB approximation; energy-band analysis; gate-leakage model; high-k gate dielectric; hole tunneling; inversion region; CMOS technology; Data engineering; Dielectric devices; Dielectric materials; Dielectric substrates; Gate leakage; Leakage current; MOS capacitors; MOS devices; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306293
