Title :
Atomically controlled CVD technology for group IV semiconductors
Author :
Murota, Junichi ; Sakuraba, Masao ; Tillack, Bernd
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
Abstract :
One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing based on atomic-order surface reaction control. The main idea of the atomic layer approach is the separation of the surface adsorption of reactant gases from the reaction process. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Moreover, Si or SiGe epitaxial growth over N, P or B layer already-formed on Si(100) or SiGe(100) surface is achieved. Furthermore, the capability of atomically controlled processing for advanced devices is demonstrated. These results open the way to atomically controlled technology for ultra-large-scale integrations
Keywords :
Ge-Si alloys; ULSI; chemical vapour deposition; epitaxial growth; process control; semiconductor doping; semiconductor technology; silicon; surface chemistry; Ge(100) surface; Langmuir-type model; Si(100) surface; advanced devices; atomic-order surface reaction control; atomically controlled CVD technology; group IV semiconductors; process technology; reaction process; self-limiting formation; surface adsorption; thermal adsorption; ultra-large-scale integrations; ultrasmall device; Atomic layer deposition; Atomic measurements; Communication system control; Doping; Epitaxial growth; Equations; Gases; Impurities; Process control; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306295