• DocumentCode
    3464451
  • Title

    Fundamentals and applications of selenium-passivated Si[100] surface

  • Author

    Tao, M.

  • Author_Institution
    Dept. of Electr. Eng., Texas Univ., Arlington, TX
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    458
  • Lastpage
    461
  • Abstract
    Surface states have been one of the fundamental problems in semiconductor technology since the Bardeen era. It is found that a Si(100) surface passivated with a monolayer of selenium can significantly reduce surface states. A number of applications are envisioned for this atomically-engineered surface, including low-resistance ohmic contacts for Si microelectronics, photovoltaics, and high-temperature electronics, interface engineering between high-k dielectrics and Si(100) for Si nanoelectronics, and suppression of surface recombination for Si photovoltaics. Experimental results for some of these applications are presented
  • Keywords
    elemental semiconductors; passivation; selenium; semiconductor technology; silicon; surface states; Se; Si; Si microelectronics; high-k dielectrics; high-temperature electronics; interface engineering; low-resistance ohmic contacts; photovoltaics; selenium-passivated Si(100) surface; semiconductor technology; surface recombination suppression; surface states; Atomic layer deposition; High-K gate dielectrics; Microelectronics; Ohmic contacts; Passivation; Photovoltaic cells; Rough surfaces; Surface cleaning; Surface reconstruction; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306300
  • Filename
    4098135