DocumentCode :
3464451
Title :
Fundamentals and applications of selenium-passivated Si[100] surface
Author :
Tao, M.
Author_Institution :
Dept. of Electr. Eng., Texas Univ., Arlington, TX
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
458
Lastpage :
461
Abstract :
Surface states have been one of the fundamental problems in semiconductor technology since the Bardeen era. It is found that a Si(100) surface passivated with a monolayer of selenium can significantly reduce surface states. A number of applications are envisioned for this atomically-engineered surface, including low-resistance ohmic contacts for Si microelectronics, photovoltaics, and high-temperature electronics, interface engineering between high-k dielectrics and Si(100) for Si nanoelectronics, and suppression of surface recombination for Si photovoltaics. Experimental results for some of these applications are presented
Keywords :
elemental semiconductors; passivation; selenium; semiconductor technology; silicon; surface states; Se; Si; Si microelectronics; high-k dielectrics; high-temperature electronics; interface engineering; low-resistance ohmic contacts; photovoltaics; selenium-passivated Si(100) surface; semiconductor technology; surface recombination suppression; surface states; Atomic layer deposition; High-K gate dielectrics; Microelectronics; Ohmic contacts; Passivation; Photovoltaic cells; Rough surfaces; Surface cleaning; Surface reconstruction; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306300
Filename :
4098135
Link To Document :
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